growth-factor 发表于 2025-3-26 22:46:03

https://doi.org/10.1007/978-3-662-56392-2, including epitaxial-layer preparation and processing. High-frequency characteristics and related electron transport peculiar to HBTs are discussed in Section 7.4. The performance of integrated circuits is described in Section 7.5. The last section summarizes state-of-the-art HBT technology and prospects for the future.

衍生 发表于 2025-3-27 02:09:49

Introduction,uters and telecommunications systems, in order to achieve higher bit rates for operations. The motive for preparing this book was to look at the high-speed-device issue from the systems point of view. From the systems side, limitations in silicon-based device technology, such as switching speed and

languor 发表于 2025-3-27 07:14:37

GaAs Materials,ing with the lowest integration density. Now the integration density has reached a level of 30 kgates gate array, or a level of 16 kbits Static RAM (SRAM). These GaAs ICs are currently being used in supercomputers.

包租车船 发表于 2025-3-27 10:20:47

High-Speed Analog Integrated Circuits,tion systems in each segment are instrumentation in industrial; microwave data link, very small aperture terminal (VSAT), and fiber optics in communications; and DBS, TV, and cellular radio in the consumer market. Application systems which are under development are summarized in Table 3.1.

下船 发表于 2025-3-27 16:09:29

GaAs ICs for Digital Applications,ness. GaAs IC chips consist of circuit elements and interconnections on a semi-insulating substrate. High-speed IC chips have to be mounted in low-capacitance packages for low-distortion waveform transmission. The most significant element of an IC is the switching transistor, which determines the in

泥土谦卑 发表于 2025-3-27 21:21:49

HEMT Materials,uctor materials, superlattices, and heterostructure devices have been developed since the pioneering work on molecular-beam epitaxy (MBE), by J. R. Arthur and A. Y. Cho, . and metal-organic chemical vapor deposition (MOCVD), by H. M. Manasevit.. High-electron-mobility transistors (HEMTs). based on s

BIPED 发表于 2025-3-28 01:09:51

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证实 发表于 2025-3-28 03:42:12

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流利圆滑 发表于 2025-3-28 07:31:17

Josephson Digital Devices,r of devices based on the Josephson effect have been proposed, forming a field called superconducting electronics. A significant part of the progress in this field is due to digital applications of the Josephson effect.

退出可食用 发表于 2025-3-28 10:56:00

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查看完整版本: Titlebook: Compound and Josephson High-Speed Devices; Takahiko Misugi,Akihiro Shibatomi Book 1993 Springer Science+Business Media New York 1993 analo