钢笔记下惩罚
发表于 2025-3-25 05:21:41
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animated
发表于 2025-3-25 07:32:44
High-Speed Analog Integrated Circuits,tion systems in each segment are instrumentation in industrial; microwave data link, very small aperture terminal (VSAT), and fiber optics in communications; and DBS, TV, and cellular radio in the consumer market. Application systems which are under development are summarized in Table 3.1.
GROVE
发表于 2025-3-25 11:43:41
Josephson Digital Devices,r of devices based on the Josephson effect have been proposed, forming a field called superconducting electronics. A significant part of the progress in this field is due to digital applications of the Josephson effect.
sorbitol
发表于 2025-3-25 18:30:11
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租约
发表于 2025-3-25 20:11:30
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纹章
发表于 2025-3-26 00:38:35
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parasite
发表于 2025-3-26 04:51:38
https://doi.org/10.1007/978-3-322-88325-4thur and A. Y. Cho, . and metal-organic chemical vapor deposition (MOCVD), by H. M. Manasevit.. High-electron-mobility transistors (HEMTs). based on selectively doped GaAs-A1GaAs heterojunction structures. are one of the successful MBE and MOCVD applications.
艰苦地移动
发表于 2025-3-26 11:10:15
HEMT Materials,thur and A. Y. Cho, . and metal-organic chemical vapor deposition (MOCVD), by H. M. Manasevit.. High-electron-mobility transistors (HEMTs). based on selectively doped GaAs-A1GaAs heterojunction structures. are one of the successful MBE and MOCVD applications.
exigent
发表于 2025-3-26 16:37:07
Heterojunction Bipolar Transistors,, including epitaxial-layer preparation and processing. High-frequency characteristics and related electron transport peculiar to HBTs are discussed in Section 7.4. The performance of integrated circuits is described in Section 7.5. The last section summarizes state-of-the-art HBT technology and prospects for the future.
VICT
发表于 2025-3-26 18:19:29
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