气泡 发表于 2025-3-21 19:45:32

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下垂 发表于 2025-3-21 20:19:53

Fire Resistance of Protected Slim Floors practice the familiar semiconductor devices such as MESFETs still appear to operate in a an essentially classical way even when their dimensions are very small (e.g. gate lengths < 30 nm). One of the reasons why quantum effects are not always apparent in semiconductors is that changes in potential

我不重要 发表于 2025-3-22 03:27:39

https://doi.org/10.1007/978-1-4471-4872-2e complexity of physical models simply increases to use the resources at hand. Moreover, circuit engineers are familiar with circuit concepts and are likely to choose to work with equivalent circuits if they are sufficiently accurate for design purposes. It appears safe to assume that equivalent cir

BANAL 发表于 2025-3-22 05:21:50

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可憎 发表于 2025-3-22 11:42:53

Introduction to Quantum Modelling, practice the familiar semiconductor devices such as MESFETs still appear to operate in a an essentially classical way even when their dimensions are very small (e.g. gate lengths < 30 nm). One of the reasons why quantum effects are not always apparent in semiconductors is that changes in potential

GLOOM 发表于 2025-3-22 16:52:00

Equivalent Circuit Modelling,e complexity of physical models simply increases to use the resources at hand. Moreover, circuit engineers are familiar with circuit concepts and are likely to choose to work with equivalent circuits if they are sufficiently accurate for design purposes. It appears safe to assume that equivalent cir

GLOOM 发表于 2025-3-22 18:57:11

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Anticonvulsants 发表于 2025-3-22 22:27:30

ient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low freque978-1-4471-2050-6978-1-4471-2048-3

粗语 发表于 2025-3-23 04:27:39

Fire Resistance of Protected Slim Floorsltaneous nonlinear equations after discretisation has taken place. It is not possible in a single paper to fully describe all the numerical techniques involved in this process, and in this paper we will concentrate on the finite difference approach. Descriptions of the Finite Element method (Selberh

遗传学 发表于 2025-3-23 09:13:41

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查看完整版本: Titlebook: Compound Semiconductor Device Modelling; Christopher M. Snowden,Robert E. Miles Book 1993 Springer-Verlag London Limited 1993 Compound.Dev