里程碑
发表于 2025-3-30 08:52:05
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neutralize
发表于 2025-3-30 13:00:03
HEMT Modelling,hallenged from time to time by MESFET technology (see Feng et al. 1990). This prominence has caused a great deal of activity in the area of HEMT modeling. HEMTs (which are also called HFETs — for Heterostructure Field Effect Transistors or MODFETs — for Modulation Doped Field Effect Transistors, or
gnarled
发表于 2025-3-30 18:43:13
HBT Modelling,ion to high speed logic. A particular attraction is that it can often be used directly in circuits that have been developed over many years for silicon technology representing a significant saving in design costs. Various different structures for the HBT have been suggested and fabricated based on b
Decrepit
发表于 2025-3-30 23:22:30
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FLUSH
发表于 2025-3-31 03:16:11
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使厌恶
发表于 2025-3-31 08:10:55
Modelling of Distributed Feedback Lasers,rs are usually of such a nature that variations in the lateral and transverse direction, as well as the electronic transport problem can be treated in a most simplified way, while longitudinal and spectral variations need to be taken into account in a detailed way.
愤怒事实
发表于 2025-3-31 12:36:05
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巨硕
发表于 2025-3-31 16:44:56
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