使成整体
发表于 2025-3-23 11:52:53
https://doi.org/10.1007/978-1-4471-4872-2hallenged from time to time by MESFET technology (see Feng et al. 1990). This prominence has caused a great deal of activity in the area of HEMT modeling. HEMTs (which are also called HFETs — for Heterostructure Field Effect Transistors or MODFETs — for Modulation Doped Field Effect Transistors, or
notice
发表于 2025-3-23 17:42:15
https://doi.org/10.1007/978-1-4471-4872-2ion to high speed logic. A particular attraction is that it can often be used directly in circuits that have been developed over many years for silicon technology representing a significant saving in design costs. Various different structures for the HBT have been suggested and fabricated based on b
annexation
发表于 2025-3-23 19:40:39
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ACTIN
发表于 2025-3-24 01:22:22
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吸气
发表于 2025-3-24 05:31:57
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Cpap155
发表于 2025-3-24 09:55:36
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ethnology
发表于 2025-3-24 14:15:56
Ultra High-Strength Maraging Steelagnitude of the RF signal relative to the operating bias. Therefore, die magnitude of the RF signal that produces large-signal effects can vary widely, depending upon the type of device and the bias conditions under which the device operates. For example, semiconductor power diodes may be operated w
松果
发表于 2025-3-24 16:33:23
Fire Resistance of Protected Slim Floors are due to random events that modify the number and/or the velocity of carriers. So, at any point . of any device, the current density . fluctuates which induces a fluctuating voltage (or current) at the device electrodes. It should be noted that only these macroscopic current and voltage fluctuati
Venules
发表于 2025-3-24 20:18:14
https://doi.org/10.1007/978-1-4471-4872-2e analized and discussed in detail, together with the physical model implemented for the description of carrier transport in III–V semiconductors. Some special features that can be very useful in dealing with real devices are also examined. It is shown that the MC method is a mature technique for mo
Infraction
发表于 2025-3-25 00:05:54
Fire Resistance of Protected Slim Floors dimensional (2D) models are mainly devoted to physical analysis while more simple models (analytical or one-dimensional for instance) are rather devoted to electrical engineering, CAD, IC design... The aim of the quasi two dimensional approach (Q2D) is to be a modelling taking into consideration th