malignant
发表于 2025-3-21 18:38:23
书目名称Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0224500<br><br> <br><br>书目名称Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0224500<br><br> <br><br>书目名称Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0224500<br><br> <br><br>书目名称Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0224500<br><br> <br><br>书目名称Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0224500<br><br> <br><br>书目名称Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0224500<br><br> <br><br>书目名称Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0224500<br><br> <br><br>书目名称Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0224500<br><br> <br><br>书目名称Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0224500<br><br> <br><br>书目名称Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0224500<br><br> <br><br>
蚀刻
发表于 2025-3-21 23:28:25
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palette
发表于 2025-3-22 03:31:01
Chemical-Mechanical Planarization (CMP),al and dielectric layers that form the IC interconnect structure [., .]. Nonplanarity is introduced to the wafer surface at the transistor isolation level and increases as the number of metal layers increases. CMP is the process of physically removing material from places of high topography to flatt
alliance
发表于 2025-3-22 05:22:01
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Tartar
发表于 2025-3-22 09:42:47
,Low-κ CMP Model Based on Surface Kinetics,physically-based conceptual model for low-κ CMP. The model assumes an altered-layer surface mechanism approach to represent the CMP of BCB, SiLK, and OSG materials and provide a generic understanding of the CMP proce ss for other materials. The model also assumes a desirable low-κ CMP process where
PRO
发表于 2025-3-22 15:04:40
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PRO
发表于 2025-3-22 19:03:11
,Future Directions in IC Interconnects and Related Low-κ Ild Planarization Issues,vent conventional ICs from being interconnect limited. However, as CMOS scaling and lithography advances reduce the minimum feature size below 50 nm, interconnects will again become a performance limiter and probably a manufacturing cost enhancer. Unlike the situation in the late 80s, new materials
PANIC
发表于 2025-3-22 21:41:25
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托运
发表于 2025-3-23 04:13:56
Subunit Interactions in Haemoglobinsity transistors. During these initial two decades of IC development (early 60s to early 80s), the back-end-of-the-line (BEOL) interconnect structure was neither a performance limiter nor a manufacturing cost enhancer. As front-end-of-the-line (FEOL) technology improved with lithography and other ad
uncertain
发表于 2025-3-23 07:10:52
Protein-Protein Interaction Databasesc (ILD). Materials with low-κ values to be used in the near term, such as polymer materials and organic/inorganic hybrids, target the 2.5 – 3.0 dielectric constant range. Subsequent low-κ technology nodes approach the κ ≤ 2.2 range, implying the incorporation of porosity into one of the currently in