Enteropathic
发表于 2025-3-23 12:19:46
Nahla Al Anqodi,Ruqaiya Moosa Al Balushial and dielectric layers that form the IC interconnect structure [., .]. Nonplanarity is introduced to the wafer surface at the transistor isolation level and increases as the number of metal layers increases. CMP is the process of physically removing material from places of high topography to flatt
高度表
发表于 2025-3-23 15:17:06
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prick-test
发表于 2025-3-23 19:25:31
Zusammenfassung und Implikationen,physically-based conceptual model for low-κ CMP. The model assumes an altered-layer surface mechanism approach to represent the CMP of BCB, SiLK, and OSG materials and provide a generic understanding of the CMP proce ss for other materials. The model also assumes a desirable low-κ CMP process where
潜移默化
发表于 2025-3-23 23:13:13
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有组织
发表于 2025-3-24 02:33:00
Zusammenfassung und Implikationen,vent conventional ICs from being interconnect limited. However, as CMOS scaling and lithography advances reduce the minimum feature size below 50 nm, interconnects will again become a performance limiter and probably a manufacturing cost enhancer. Unlike the situation in the late 80s, new materials
addition
发表于 2025-3-24 08:13:43
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Recessive
发表于 2025-3-24 12:04:40
CMP of Organosilicate Glasses,The previous chapter outlined experiments that were used to characterize the CMP of low-κ polymer films. In this chapter, we develop a similar understanding for organosilicate (OSG) films, utilizing the low-κ polymer results and the well established understanding of silicon dioxide CMP.
排名真古怪
发表于 2025-3-24 14:52:58
https://doi.org/10.1007/978-1-4615-1165-6development; dielectrics; glass; integrated circuit; interconnect; material; mechanics; metals; model; modeli
febrile
发表于 2025-3-24 20:06:06
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DEAF
发表于 2025-3-25 02:45:40
,Future Directions in IC Interconnects and Related Low-κ Ild Planarization Issues,and a new patterning process used with an increasing amount of interconnect levels will not be a viable solution. After copper metallization with atomic-scale liners and dielectrics with κ<1.8, conventional approaches are not compatible with the performance needed with sub-50nm devices.