GUST
发表于 2025-3-21 18:06:40
书目名称CMOS VLSI Engineering影响因子(影响力)<br> http://impactfactor.cn/2024/if/?ISSN=BK0220369<br><br> <br><br>书目名称CMOS VLSI Engineering影响因子(影响力)学科排名<br> http://impactfactor.cn/2024/ifr/?ISSN=BK0220369<br><br> <br><br>书目名称CMOS VLSI Engineering网络公开度<br> http://impactfactor.cn/2024/at/?ISSN=BK0220369<br><br> <br><br>书目名称CMOS VLSI Engineering网络公开度学科排名<br> http://impactfactor.cn/2024/atr/?ISSN=BK0220369<br><br> <br><br>书目名称CMOS VLSI Engineering被引频次<br> http://impactfactor.cn/2024/tc/?ISSN=BK0220369<br><br> <br><br>书目名称CMOS VLSI Engineering被引频次学科排名<br> http://impactfactor.cn/2024/tcr/?ISSN=BK0220369<br><br> <br><br>书目名称CMOS VLSI Engineering年度引用<br> http://impactfactor.cn/2024/ii/?ISSN=BK0220369<br><br> <br><br>书目名称CMOS VLSI Engineering年度引用学科排名<br> http://impactfactor.cn/2024/iir/?ISSN=BK0220369<br><br> <br><br>书目名称CMOS VLSI Engineering读者反馈<br> http://impactfactor.cn/2024/5y/?ISSN=BK0220369<br><br> <br><br>书目名称CMOS VLSI Engineering读者反馈学科排名<br> http://impactfactor.cn/2024/5yr/?ISSN=BK0220369<br><br> <br><br>
怎样才咆哮
发表于 2025-3-21 21:56:31
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冥想后
发表于 2025-3-22 03:59:28
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PATRI
发表于 2025-3-22 07:51:44
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关心
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decode
发表于 2025-3-22 16:01:31
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decode
发表于 2025-3-22 20:57:23
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Rinne-Test
发表于 2025-3-23 00:08:03
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subordinate
发表于 2025-3-23 05:13:32
H. V. Grushevskaya,G. G. Krylovo bulk CMOS devices, SOI CMOS devices have been reknown for their superior performance in smaller second order effects, no latchup, and higher speed. Due to their unique structure, SOI CMOS devices have performance quite different from the bulk ones. In this chapter, fundamental behaviors of SOI CMO
insincerity
发表于 2025-3-23 06:21:43
Sofiane El-Kirat-Chatel,Audrey Beaussarthe buried oxide isolation structure, accumulation-mode devices are also important. In this chapter, first, the DC and the capacitance models for the accumulation-mode SOI MOS devices are presented. Recently, the trends on the fully-depleted SOI CMOS devices are toward using very thin silicon thin-fi