有权威
发表于 2025-3-23 10:25:06
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DRAFT
发表于 2025-3-23 16:25:59
P. P. Simeonova,N. Opopol,M. I. Luster devices, are vertical SOI transistors. In the beginning of this chapter, DELTAs are presented. In order to improve the surface-scattering mobility of SOI PMOS devices, SiGe-channel SOI PMOS devices were reported. The SiGe-channel is assuming the concept from the heterojunction bipolar transistors (
FRAUD
发表于 2025-3-23 19:55:58
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媒介
发表于 2025-3-24 02:02:27
H. V. Grushevskaya,G. G. Krylovntroduced. Then, a 0.25.m SOI CMOS fabrication processing sequence is described, followed by major SOI CMOS device structures. In the final portion of this chapter, special-purpose SOI technologies including DRAM, BiCMOS, and power are described.
十字架
发表于 2025-3-24 02:36:02
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Heart-Attack
发表于 2025-3-24 08:28:16
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胰脏
发表于 2025-3-24 11:57:01
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招致
发表于 2025-3-24 17:06:36
Book 1998ed oxide structure, SOI technology offers superiorCMOS devices with higher speed, high density, and reduced second ordereffects for deep-submicron low-voltage, low-power VLSI circuitsapplications. In addition to VLSI applications, and because of itsoutstanding properties, SOI technology has been use
前面
发表于 2025-3-24 19:59:34
E. D. Kuempel,C. L. Geraci,P. A. SchulteStarting from the basic concepts of the SPICE program, analytical device models of deep-submicron fully-depleted SOI CMOS devices used in ST-SPICE for CAD of VLSI circuits are explained. In the final portion of this section, usage of the ST-SPICE CAD program for analyzing the steady state and transient behaviors of SOI CMOS circuits is presented.
conflate
发表于 2025-3-24 23:14:29
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