Instinctive
发表于 2025-3-26 23:35:00
,SOI CMOS Devices—Basic,mobilities in SOI CMOS devices are complicated especially for small-geometry SOI CMOS devices. In a short-channel SOI CMOS device, the internal electric field may be high. As a result, carriers in the channel may be traveling with a large energy. Therefore, carrier temperature may be much higher tha
助记
发表于 2025-3-27 02:53:39
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脊椎动物
发表于 2025-3-27 06:04:03
Special-Purpose SOI,vices are described. Recently, SOI technology has also been used to integrate BiCMOS devices. SOI MESFET and JFETs have also been created. In addition, single-electron transistors (SET) built on SOI SIMOX substrates have been realized. Amorphous and polysilicon thin-film transistors built on insulat
instate
发表于 2025-3-27 11:45:19
Book 1998resented, followed by a CAD program, ST-SPICE, whichincorporates models for deep-submicron fully-depleted mesa-isolatedSOI CMOS devices and special purpose SOI devices including polysiliconTFTs. ..CMOS VLSI Engineering: Silicon-On-Insulator. is written forundergraduate senior students and first-year
Common-Migraine
发表于 2025-3-27 17:25:00
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广口瓶
发表于 2025-3-27 20:44:30
9楼
Fulminate
发表于 2025-3-28 00:18:03
10楼
勋章
发表于 2025-3-28 05:07:21
10楼
自负的人
发表于 2025-3-28 06:15:49
10楼
严厉批评
发表于 2025-3-28 12:56:38
10楼