Ensign
发表于 2025-3-21 20:07:30
书目名称Atomic Layer Deposition for Semiconductors影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0164739<br><br> <br><br>书目名称Atomic Layer Deposition for Semiconductors影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0164739<br><br> <br><br>书目名称Atomic Layer Deposition for Semiconductors网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0164739<br><br> <br><br>书目名称Atomic Layer Deposition for Semiconductors网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0164739<br><br> <br><br>书目名称Atomic Layer Deposition for Semiconductors被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0164739<br><br> <br><br>书目名称Atomic Layer Deposition for Semiconductors被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0164739<br><br> <br><br>书目名称Atomic Layer Deposition for Semiconductors年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0164739<br><br> <br><br>书目名称Atomic Layer Deposition for Semiconductors年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0164739<br><br> <br><br>书目名称Atomic Layer Deposition for Semiconductors读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0164739<br><br> <br><br>书目名称Atomic Layer Deposition for Semiconductors读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0164739<br><br> <br><br>
痛苦一生
发表于 2025-3-21 20:56:46
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没有希望
发表于 2025-3-22 00:36:51
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慢慢冲刷
发表于 2025-3-22 05:36:43
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vocation
发表于 2025-3-22 12:22:08
Erratum to: Atomic Layer Deposition for Semiconductors,
dominant
发表于 2025-3-22 15:22:21
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Resection
发表于 2025-3-22 17:10:50
https://doi.org/10.1007/978-3-030-04729-0, sulfides, selenides and tellurides of some elements, and phosphides, arsenides, carbides, and fluorides of few elements. The mechanisms of ALD reactions involve the transfer of atoms between precursor vapors and surfaces. The transferred atoms are either hydrogen, oxygen, fluorine, or chlorine.
prodrome
发表于 2025-3-23 00:46:13
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nonchalance
发表于 2025-3-23 04:02:13
The Militaristic Discourse of Anti-feminism,entional Si substrate, which is also discussed. Finally, various state-of-the-art devices with ALD high-k film such as Ge and III–Vs-based metal–oxide–semiconductor field effect transistors (MOSFETs) and three-dimensional MOSFETs are introduced, and their reliability characteristics are discussed.
Texture
发表于 2025-3-23 08:59:06
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