keloid
发表于 2025-3-26 21:52:35
Mustafa Balkaya Ph.D.,Guven Catak Ph.D.tching capabilities was published [.] and variations of phase change memory cell designs were patented [.] by Ovshisky in the 1960s. Early phase change materials based on the Te–As–Si-Ge system, however, switched too slowly for a viable memory technology.
圆木可阻碍
发表于 2025-3-27 03:17:11
https://doi.org/10.1007/978-1-4614-8054-9ALD for mass-production memories; ALD modeling; ALD simulations; Atomic Layer Deposition; Modern Semicon
Expertise
发表于 2025-3-27 06:17:11
978-1-4899-7943-8Springer Science+Business Media New York 2014
绕着哥哥问
发表于 2025-3-27 11:59:58
PCRAMtching capabilities was published [.] and variations of phase change memory cell designs were patented [.] by Ovshisky in the 1960s. Early phase change materials based on the Te–As–Si-Ge system, however, switched too slowly for a viable memory technology.
FIN
发表于 2025-3-27 17:33:30
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抛射物
发表于 2025-3-27 18:13:02
https://doi.org/10.1007/978-3-030-04729-0 ALD precursors are now known for most non-radioactive elements and many of them are commercially available. This review describes their chemical types, typical properties, and reactivity. Suitable pairs of precursors can deposit some pure elements, oxides of most elements, nitrides of many elements
osteocytes
发表于 2025-3-27 23:34:47
https://doi.org/10.1007/978-3-030-04729-0, considering the elementary steps of precursor adsorption, ligand elimination, and film densification, as well as reactions with substrates (particularly Si and SiO.) and CVD-like decomposition reactions. Density functional theory (DFT) is the first principles method generally applied to these mech
PRISE
发表于 2025-3-28 02:14:03
Barbaros Bostan Ph.D.,Ozhan Tingoy Ph.D.puting in any computer requires two key information sets; programs, and the data to program with. Both sets are stored as a form of ‘bits’ in the core memory part of a computer. Any computed output that comes from these actions is also stored as a data set within different parts of the memories that
Banister
发表于 2025-3-28 06:29:23
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plasma
发表于 2025-3-28 14:09:53
Selcen Ozturkcan Ph.D.,Sercan Sengun M.A.ost promising nonvolatile (NV) memory devices [., .]. Key parameters for the scaling of ferroelectric random access memories are shrinking of the feature size, reduction of operation voltage, and enhancement of voltage sensing. In this chapter, we will summarize several key technology issues which h