CARK
发表于 2025-3-23 11:11:42
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敏捷
发表于 2025-3-23 16:08:02
Back End of the Lineor Cu metallization, very thin and conformal deposition of diffusion barrier and seed layer is essential for good gap fill by electroplating. In this chapter, we will review the efforts on the application of ALD at BEOL process; including contact/plug formation and metallization.
星星
发表于 2025-3-23 20:42:25
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敌意
发表于 2025-3-23 23:10:54
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地名词典
发表于 2025-3-24 02:48:40
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Predigest
发表于 2025-3-24 08:03:17
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模仿
发表于 2025-3-24 14:03:38
ALD Simulationsultiscale simulations of gas flow are used to investigate conformality in high aspect ratio features and uniformity of growth within a reactor. The most popular subject for modeling is the ALD of oxides and nitrides, particularly the high-. dielectrics HfO., ZrO., and Al.O., due to their importance in semiconductor processing.
名词
发表于 2025-3-24 18:54:51
Introduction, sulfides, selenides and tellurides of some elements, and phosphides, arsenides, carbides, and fluorides of few elements. The mechanisms of ALD reactions involve the transfer of atoms between precursor vapors and surfaces. The transferred atoms are either hydrogen, oxygen, fluorine, or chlorine.
火花
发表于 2025-3-24 19:29:31
ALD Precursors and Reaction Mechanisms, sulfides, selenides and tellurides of some elements, and phosphides, arsenides, carbides, and fluorides of few elements. The mechanisms of ALD reactions involve the transfer of atoms between precursor vapors and surfaces. The transferred atoms are either hydrogen, oxygen, fluorine, or chlorine.
顶点
发表于 2025-3-25 00:26:53
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