Titlebook: Atomic Layer Deposition for Semiconductors; Choel Seong Hwang Book 2014 Springer Science+Business Media New York 2014 ALD for mass-product

Ensign

书目名称Atomic Layer Deposition for Semiconductors影响因子(影响力)




书目名称Atomic Layer Deposition for Semiconductors影响因子(影响力)学科排名




书目名称Atomic Layer Deposition for Semiconductors网络公开度




书目名称Atomic Layer Deposition for Semiconductors网络公开度学科排名




书目名称Atomic Layer Deposition for Semiconductors被引频次




书目名称Atomic Layer Deposition for Semiconductors被引频次学科排名




书目名称Atomic Layer Deposition for Semiconductors年度引用




书目名称Atomic Layer Deposition for Semiconductors年度引用学科排名




书目名称Atomic Layer Deposition for Semiconductors读者反馈




书目名称Atomic Layer Deposition for Semiconductors读者反馈学科排名

痛苦一生

没有希望

慢慢冲刷

vocation

Erratum to: Atomic Layer Deposition for Semiconductors,

dominant

Resection

https://doi.org/10.1007/978-3-030-04729-0, sulfides, selenides and tellurides of some elements, and phosphides, arsenides, carbides, and fluorides of few elements. The mechanisms of ALD reactions involve the transfer of atoms between precursor vapors and surfaces. The transferred atoms are either hydrogen, oxygen, fluorine, or chlorine.

prodrome

nonchalance

The Militaristic Discourse of Anti-feminism,entional Si substrate, which is also discussed. Finally, various state-of-the-art devices with ALD high-k film such as Ge and III–Vs-based metal–oxide–semiconductor field effect transistors (MOSFETs) and three-dimensional MOSFETs are introduced, and their reliability characteristics are discussed.

Texture