| 书目名称 | Toward Quantum FinFET |
| 编辑 | Weihua Han,Zhiming M. Wang |
| 视频video | |
| 概述 | Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect.Provides the keys to understanding the emerging area of the quantum FinFET.Written by leading experts in ea |
| 丛书名称 | Lecture Notes in Nanoscale Science and Technology |
| 图书封面 |  |
| 描述 | .This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers‘ interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, .Toward Quantum FinFET. provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importanc |
| 出版日期 | Book 2013 |
| 关键词 | CMOS-compatibility; Fin Shape Fluctuation, FinFETs; FinFET; FinFET Quantum Mechanical Potential Modelli |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-3-319-02021-1 |
| isbn_softcover | 978-3-319-34914-5 |
| isbn_ebook | 978-3-319-02021-1Series ISSN 2195-2159 Series E-ISSN 2195-2167 |
| issn_series | 2195-2159 |
| copyright | Springer International Publishing Switzerland 2013 |
发表于 2025-3-21 16:54:44
