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Titlebook: Spin Physics in Semiconductors; Michel I. Dyakonov Book 20081st edition Springer-Verlag Berlin Heidelberg 2008 Exciton.Hall effect.Semicon

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书目名称Spin Physics in Semiconductors
编辑Michel I. Dyakonov
视频video
概述Covers the latest developments in the physics of electron and nuclear spin.Integrates the physics of transport phenomena and elementary magnetism in semiconductors.Both a reference work for researcher
丛书名称Springer Series in Solid-State Sciences
图书封面Titlebook: Spin Physics in Semiconductors;  Michel I. Dyakonov Book 20081st edition Springer-Verlag Berlin Heidelberg 2008 Exciton.Hall effect.Semicon
描述The purpose of this collective book is to present a non-exhaustive survey of sp- related phenomena in semiconductors with a focus on recent research. In some sense it may be regarded as an updated version of theOpticalOrientation book, which was entirely devoted to spin physics in bulk semiconductors. During the 24 years that have elapsed, we have witnessed, on the one hand, an extraordinary development in the wonderful semiconductor physics in two dim- sions with the accompanying revolutionary applications. On the other hand, during the last maybe 15 years there was a strong revival in the interest in spin phen- ena, in particular in low-dimensional semiconductor structures. While in the 1970s and 1980s the entire world population of researchers in the ?eld never exceeded 20 persons, now it can be counted by the hundreds and the number of publications by the thousands. This explosive growth is stimulated, to a large extent, by the hopes that the electron and/or nuclear spins in a semiconductor will help to accomplish the dream of factorizing large numbers by quantum computing and eventually to develop a new spin-based electronics, or “spintronics”. Whether any of this will happen
出版日期Book 20081st edition
关键词Exciton; Hall effect; Semiconductor; Semiconductors; Spin; Spin Hall effect; basics; dynamics; electronics; e
版次1
doihttps://doi.org/10.1007/978-3-540-78820-1
isbn_ebook978-3-540-78820-1Series ISSN 0171-1873 Series E-ISSN 2197-4179
issn_series 0171-1873
copyrightSpringer-Verlag Berlin Heidelberg 2008
The information of publication is updating

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E. L. Ivchenko,S. D. Ganichevlation was established and the results were compared to the measurements carried out both close to the foundation soil and the tree which showed good agreement with the simulation. Based on the simulation results, a test point right under the foundation was analyzed to quantify the effect of the roo
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V. K. Kalevic,K. V. Kavokin,I. A. Merkulov respectively, and ultimate shear strengths are 6.0 GPa and 1.8 GPa, respectively. Overall, 1-layer Ni C-M interface models have better mechanical properties than those of 3-layer models. The observed strengths are explained by using charge distributions and Bader charge transfer analysis. The resul
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