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Titlebook: Spatio-temporal Trend Analysis of Rainfall using R Software and ArcGIS; A Case Study of an A K. Naveena,Ramiz Tasiya,Shilpesh Rana Book 202

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发表于 2025-3-21 16:26:01 | 显示全部楼层 |阅读模式
书目名称Spatio-temporal Trend Analysis of Rainfall using R Software and ArcGIS
副标题A Case Study of an A
编辑K. Naveena,Ramiz Tasiya,Shilpesh Rana
视频video
概述Presents procedures for the use of R software to monitor rainfall trends.Includes many spatial distribution and land use/land cover maps in colour.Provides methodologies explaining future rainfall pre
丛书名称SpringerBriefs in Climate Studies
图书封面Titlebook: Spatio-temporal Trend Analysis of Rainfall using R Software and ArcGIS; A Case Study of an A K. Naveena,Ramiz Tasiya,Shilpesh Rana Book 202
描述.This book aims to provide an advanced R software approach that can carry out rainfall trend analysis using Mann-Kendall and Sen’s slope estimator tests. ..The research study follows a systematic approach while utilizing R software as it can greatly facilitate the analysis of rainfall trends...About 30 stations located in the study area and 41 to 50 years’ time series were selected for the purpose of analysis. The data for the research was collected from the State Water Data Centre (SWDC) in Gujarat, Indian Meteorological Department (IMD) in Pune, DAAC (NASA), and ESRI. Cluster analysis has been performed to analyze the variability of the mean rainfall. The stations have been divided into 2 clusters with 17 and 13 stations in each cluster which significantly differ from each other...This book is aimed at researchers, scientists and government organizations working in the field of climate change. .
出版日期Book 2023
关键词R software approach; Rainfall trend analysis; Mann-Kendall test; Digital elevation model; Climate change
版次1
doihttps://doi.org/10.1007/978-3-031-48259-5
isbn_softcover978-3-031-48258-8
isbn_ebook978-3-031-48259-5Series ISSN 2213-784X Series E-ISSN 2213-7858
issn_series 2213-784X
copyrightThe Author(s), under exclusive license to Springer Nature Switzerland AG 2023
The information of publication is updating

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K. Naveena,Ramiz Tasiya,Shilpesh Ranae for different device and process parameters that engineers use in practice to set threshold voltage of a core IC block and generate multiple threshold voltage schemes. Through graphical illustrations the authors shed light on device physical attributes that underlay these different simulation outc
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K. Naveena,Ramiz Tasiya,Shilpesh Ranae for different device and process parameters that engineers use in practice to set threshold voltage of a core IC block and generate multiple threshold voltage schemes. Through graphical illustrations the authors shed light on device physical attributes that underlay these different simulation outc
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K. Naveena,Ramiz Tasiya,Shilpesh Ranae for different device and process parameters that engineers use in practice to set threshold voltage of a core IC block and generate multiple threshold voltage schemes. Through graphical illustrations the authors shed light on device physical attributes that underlay these different simulation outc
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e for different device and process parameters that engineers use in practice to set threshold voltage of a core IC block and generate multiple threshold voltage schemes. Through graphical illustrations the authors shed light on device physical attributes that underlay these different simulation outc
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