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Titlebook: SiC Technology; Materials, Manufactu Maurizio Di Paolo Emilio Book 2024 The Editor(s) (if applicable) and The Author(s), under exclusive li

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书目名称SiC Technology
副标题Materials, Manufactu
编辑Maurizio Di Paolo Emilio
视频video
概述Provides comprehensive reference on circuit design with SiC devices.Includes industrial and automotive applications.Explores manufacturing processes and reliability features
图书封面Titlebook: SiC Technology; Materials, Manufactu Maurizio Di Paolo Emilio Book 2024 The Editor(s) (if applicable) and The Author(s), under exclusive li
描述.This essential book offers comprehensive coverage of Silicon Carbide (SiC) technology, including materials, manufacturing processes, device development, and design approaches. Authored by leading experts, it provides authoritative insights for engineers, researchers, and enthusiasts. Understanding SiC‘s future impact on technology is crucial, making this publication indispensable for those seeking to leverage its transformative potential..
出版日期Book 2024
关键词SiC Power Devices; SiC materials; SiC Design-Devices; Silicon Carbide Microsystems; Circuit design in Po
版次1
doihttps://doi.org/10.1007/978-3-031-63418-5
isbn_softcover978-3-031-63420-8
isbn_ebook978-3-031-63418-5
copyrightThe Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl
The information of publication is updating

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Conclusion,gside the industry’s transition to larger substrates, signal significant progress. Insights reflect the evolving landscape of semiconductor technology, poised to impact diverse sectors such as electric vehicles and renewable energy systems.
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Overview of Silicon Carbide, and significance. Veliadis underscores SiC’s exceptional properties, emphasizing its wide bandgap and high critical electric field, which promise enhanced power conditioning efficiency. Ming Su discusses the evolutionary journey of SiC devices, emphasizing their pivotal role in high-voltage switchi
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Manufacturing Processes, carbide (SiC) devices. John R. Silk from SemiQ, Inc., introduces bulk growth and epitaxial growth techniques essential for superior SiC semiconductor device performance. Dr. Victor Veliadis of PowerAmerica and NC State explores ion implantation in SiC devices, emphasizing optimization for power ele
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Case Studies,uer from Infineon Technologies discuss silicon carbide (SiC) technology’s transformative impact. Topics covered include SiC’s role in enhancing efficiency and reducing costs in three-phase hybrid inverters, data center alternating current (AC)/direct current (DC) power supplies, and renewable energy
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