Titlebook: Semiconductor Physics; An Introduction Karlheinz Seeger Textbook 19853rd edition Springer-Verlag Berlin Heidelberg 1985 Absorption.Halbleit

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Charge and Energy Transport in a Nondegenerate Electron Gas,

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Energy Band Structure, structures will be given in Sect. 2.4 and used for the calculation of charge transport in Chaps. 7, 8, while in Chaps. 4, 5, the transport properties will be calculated assuming the simple model of band structure (which is quite a good approximation for most purposes).

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Charge Transport and Scattering Processes in the Many-Valley Model,the . of the energy bands has proved to be a fruitful concept for a description of the observed anisotropy of electrical and optical phenomena. Cyclotron resonance (Sect. 11.11) provides a direct experimental determination of the effective masses in each valley for any crystallographic direction.

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Quantum Effects in Transport Phenomena,are some which can be understood only by quantum mechanical arguments. In Sect. 9.1 we will treat phenomena which rely on the quantum mechanical ., while in Sects. 9.2–9.4 the quantization of electron orbits in a strong magnetic field with the formation of . will be the basis for an understanding of the . behavior of transport phenomena.

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Light Generation by Semiconductors,), are called .. While the former convert electrical energy into optical radiation, the latter do the inverse process. In this chapter we will consider light-emitting diodes (LED) and diode lasers [13.1].

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Semiconductor Statistics,ve seen in Fig. 2.8. A discussion of these levels can be confined to the first Brillouin zone. We saw in the last chapter that due to the crystal periodicity, the electron wave functions, which in one dimension are ψ(.) . exp (i . x), also have to be periodic .