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Titlebook: Semiconductor Physics; An Introduction Karlheinz Seeger Book 19822nd edition Springer-Verlag Berlin Heidelberg 1982 epitaxy.hydrogen.physic

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发表于 2025-3-21 16:23:31 | 显示全部楼层 |阅读模式
书目名称Semiconductor Physics
副标题An Introduction
编辑Karlheinz Seeger
视频video
丛书名称Springer Series in Solid-State Sciences
图书封面Titlebook: Semiconductor Physics; An Introduction Karlheinz Seeger Book 19822nd edition Springer-Verlag Berlin Heidelberg 1982 epitaxy.hydrogen.physic
描述The first edition of "Semiconductor Physics" was published in 1973 by Springer-Verlag Wien-New York as a paperback in the Springer Study Edition. In 1977, a Russian translation by Professor Yu. K. Pozhela and coworkers at Vilnius/USSR was published by Izdatelstvo "MIR", Mo­ scow. Since then new ideas have been developed in the field of semi­ conductors such as electron hole droplets, dangling bond saturation in amorphous silicon by hydrogen, or the determination of the fine struc­ ture constant from surface quantization in inversion layers. New tech­ niques such as molecular beam epitaxy which has made the realization of the Esaki superlattice possible, deep level transient spectroscopy, and refined a. c. Hall techniques have evolved. Now that the Viennese edition is about to go out of print, Springer-Verlag, Berlin-Heidelberg-New York is giving me the opportunity to include these new subjects in a monograph to appear in the Solid-State Sciences series. Again it has been the intention to cover the field of semiconductor physics comprehensively, although some chapters such as diffusion of hot carriers and their galvanomagnetic phenomena, as well as super­ conducting degenerate semic
出版日期Book 19822nd edition
关键词epitaxy; hydrogen; physics; semiconductor
版次2
doihttps://doi.org/10.1007/978-3-662-02351-8
isbn_ebook978-3-662-02351-8Series ISSN 0171-1873 Series E-ISSN 2197-4179
issn_series 0171-1873
copyrightSpringer-Verlag Berlin Heidelberg 1982
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Energy Band Structure,uare of the momentum. The factor of proportionality is 1/2 .., where .. is the free electron mass. In the ., the same relationship between energy and momentum is assumed except that .. is replaced by an . This may be larger or smaller than ... Why this is so will be seen later in this chapter. Quite
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Semiconductor Statistics,ve seen in Fig. 2.8. A discussion of these levels can be confined to the first Brillouin zone. We saw in the last chapter that due to the crystal periodicity, the electron wave functions, which in one dimension are . = . exp (i ., also have to be periodic . Hence, from .and .we obtain .or .where a i
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Scattering Processes in a Spherical One-Valley Model,nomagnetic, thermoelectric, thermomagnetic, etc., effects. We will now treat the important scattering mechanisms and find the energy dependence of τ. . For those cases where a power law is found, the magnitude of the exponent . will be determined.
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Charge Transport and Scattering Processes in the Many-Valley Model,her 8 half-ellipsoids of 6 ellipsoids of revolution; these correspond to 4 and 6 energy valleys, respectively. In these and many other semiconductors the . of the energy bands has proved to be a fruitful concept for a description of the observed anisotropy of electrical and optical phenomena. Cyclot
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Carrier Transport in the Warped-Sphere Model,s case are warped spheres which have already been discussed in Sect. 2.4 (Figs. 2.28 a-2.28 c) . In the zincblende lattice typical for III—V compounds, there is no center of inversion, in contrast to the diamond lattice.
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Quantum Effects in Transport Phenomena, only domain of quantum mechanics in semiconductivity. Although most transport phenomena can be explained by assuming a classical electron gas, there are some which can be understood only by quantum mechanical arguments. In Sect. 9.1 we will treat phenomena which rely on the quantum mechanical ., wh
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Impact Ionization and Avalanche Breakdown,uctors may serve as model substances for gaseous plasmas since their ionic charges are practically immobile and therefore the interpretation of experimental data is facilitated. Impact ionization has been achieved both in the bulk of homogeneously doped semiconductors at low temperatures and in p-n
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