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Titlebook: Semiconductor Physics; An Introduction Karlheinz Seeger Textbook 20028th edition Springer-Verlag Berlin Heidelberg 2002 Quantum Hall Effect

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发表于 2025-3-21 19:46:20 | 显示全部楼层 |阅读模式
书目名称Semiconductor Physics
副标题An Introduction
编辑Karlheinz Seeger
视频video
概述A well established text book giving a detailed introduction to one of the most important topics within physics.This 8th edition includes new treatments of superlattices, quantum wires, and quantum dot
丛书名称Advanced Texts in Physics
图书封面Titlebook: Semiconductor Physics; An Introduction Karlheinz Seeger Textbook 20028th edition Springer-Verlag Berlin Heidelberg 2002 Quantum Hall Effect
描述This book, now in its eighth edition, still has the character of a textbook with the emphasis on "Physics". I have refrained from sacrificing topics such as the Seebeck, Thomson, Peltier and quantum Hall effects although they do not have a large-scale practical application. The various kinds of field effect transistors such as HBT, HEMT, MODFET and the chip technology have not been considered because going into details would necessarily end up with referring the interested reader to commercially available computer programs, i.e. to the Big Business world. What is new compared with the previous edition? In Chap. 1 you will now find a short description of production processes of pure single crystal silicon which is nearly free of lattice defects. In Sect. 4.14 the calculation of current in a sample subject to combined de and high-frequency ac fields is based on quantum mechanics rather than classical physics (called "photon assisted tunneling"). The calculation is applied to charge transport in quantum wires and dots in Chap.14. This chapter includes production methods for quantum dots in their regular arrangement and a dot laser which operates at room temperature. In Chap. 15 there
出版日期Textbook 20028th edition
关键词Quantum Hall Effect; Scattering processes; Semiconductors; Standard; algebra; electronics; laser; mathemati
版次8
doihttps://doi.org/10.1007/978-3-662-05025-5
isbn_ebook978-3-662-05025-5Series ISSN 1439-2674
issn_series 1439-2674
copyrightSpringer-Verlag Berlin Heidelberg 2002
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Photoconductivity,In Sects. 5.8, 5.9 we considered diffusion of carriers which are generated by the absorption of light. In this chapter we will discuss photoconductivity in greater detail with emphasis on trapping processes.
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https://doi.org/10.1007/978-3-662-05025-5Quantum Hall Effect; Scattering processes; Semiconductors; Standard; algebra; electronics; laser; mathemati
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Carrier Diffusion Processes,urrent j = −...∇.., where .. is proportional to the electron mobility due to the Einstein relation (4.10.12). In this chapter we will investigate the diffusion of . carriers in local variations in the type of doping, which is typical for p-n junctions and bipolar transistors.
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Carrier Transport in the Warped-Sphere Model,his case are warped spheres which have already been discussed in Sect. 2.4 (Figs. 2.28a–2.28c). In the zincblende lattice typical for III–V compounds, there is no center of inversion, in contrast to the diamond lattice.
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