Titlebook: Semiconductor Interfaces at the Sub-Nanometer Scale; H. W. M. Salemink,M. D. Pashley Book 1993 Kluwer Academic Publishers 1993 Helium-Atom

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Epitaxial Interfaces of III-V Heterostructures: Atomic Resolution, Composition Fluctuations and Dopiproximately 3.5 nm. The extent of this electronic transition is discussed and a quantitative interpretation of the . curves is made, including tip-induced bandbending in the semiconductor. The role of the local doping concentration is discussed in context with spectroscopy. In addition, the observat

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Book 1993cribed below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxo

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Semiconductor Interfaces at the Sub-Nanometer Scale

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P. M. Koenraad,I. Bársony,J. C. M. Henning,J. A. A. P. Perenboom,J. H. Wolterd sometimes comically pretentious strains he supplies for the other bards, Hogg appears much more witty, dynamic and imaginative, with a deftness of touch and a sense of humour which make his ballad ‘The Gude Greye Katt’ one of the jewels of the collection. Even as he depicts himself as an integral

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