Titlebook: Rapid Thermal Processing of Semiconductors; Victor E. Borisenko,Peter J. Hesketh Book 1997 Springer Science+Business Media New York 1997 c

威风

书目名称Rapid Thermal Processing of Semiconductors影响因子(影响力)




书目名称Rapid Thermal Processing of Semiconductors影响因子(影响力)学科排名




书目名称Rapid Thermal Processing of Semiconductors网络公开度




书目名称Rapid Thermal Processing of Semiconductors网络公开度学科排名




书目名称Rapid Thermal Processing of Semiconductors被引频次




书目名称Rapid Thermal Processing of Semiconductors被引频次学科排名




书目名称Rapid Thermal Processing of Semiconductors年度引用




书目名称Rapid Thermal Processing of Semiconductors年度引用学科排名




书目名称Rapid Thermal Processing of Semiconductors读者反馈




书目名称Rapid Thermal Processing of Semiconductors读者反馈学科排名

休闲

煤渣

凶猛

修饰

978-1-4899-1806-2Springer Science+Business Media New York 1997

comely

Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals,or in silicon are presented and discussed. In particular, the distinct features based on the nonequilibrium conditions created in RTP are emphasized. These phenomena have been investigated for the most part in the solid state for silicon.

Chauvinistic

Rapid Thermal Oxidation and Nitridation,e oxide thickness decreases and the gate capacitance increases. In EEPROMs Fowler-Nordheim (FN) tunneling current, which is used to charge and discharge the gate of the memory cell, can slowly degrade the gate dielectric properties through trapped charges in the gate dielectric. The resultant shift

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RACE

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