Titlebook: Quantum Semiconductor Devices and Technologies; T. P. Pearsall Book 2000 Springer Science+Business Media New York 2000 nanostructure.quant

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he validation, the influence of several significant parameters such as the porosity, the volume fraction exponent, side-thickness ratio, support conditions and aspect ratio on buckling responses of the porous FGM plate under temperature loads is evaluated. Results showed that the buckling response o

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at importance to the research community. Therefore, the objective of the current investigation is to study the impact of porosity and temperature loads on the buckling characteristics of FGM plates. The effective material properties of porous FGM plates are found using modified power law distributio

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P. Hadley,J. E. Mooijtensile properties, fracture strength, and corrosion resistance. The influence of swaging parameters, feed rate (1.25 and 2 m/min), die angle (2–12°), friction coefficient (0.15, 0.2, 0.25, 0.3), and deformation (0–40%) on residual stress induced in Zirconium alloys is investigated numerically and e

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Self-formed quantum dot structures and their potential device applications,nd because it has possibilities for developing new principles or new concept devices. This area of research seems to have been promoted by the continuous interest and efforts of researchers to find something new to cultivate in new areas of science and technology.

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Quantum nanocircuits: chips of the future?,ation of the past, formulated in Moore’s law, serves as the prescription for the future as laid down in the .. [.]. This Roadmap indicates gate widths for CMOS transistors of 35 nm in the year 2012. Continuation would predict minimum feature sizes of 1 nm around 2040. Many times in the past, a break

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Self-formed quantum dot structures and their potential device applications,is simply because the QD structure is ultimately a scaled-down structure of electron and optical devices that we shall reach sometime in the future, and because it has possibilities for developing new principles or new concept devices. This area of research seems to have been promoted by the continu

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Lithography and patterning for nanostructure fabrication, A related but independent set of lithography and nanofabrication technologies continues to evolve in support of a growing effort in quantum structures and nanostructured materials studies. The demands of the nanostructure research and device work has significantly more stringent size scale requirem

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The use of MOVPE to produce quantum structured semiconductors,II/VI semiconductor compounds and ternary and quaternary alloys (for an overview, see, for instance, [.] and the references therein). The importance of MOVPE for mass production has been increasing. In terms of consumption of II/V wafer area, MOVPE is today rated second (20%), after liquid-phase epi

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Growth, characterization, and applications of self-assembled InGaAs quantum dots, formed by the so-called Stranski-Krastanow (SK) transition of the highly lattice-mismatched In.Ga.As film. The In.Ga.As/GaAs system is the prototypical system in III–V growth for self-assembly of QDs, and consequently it is the most heavily studied. The lattice constant of InAs is about 7.2% larger