| 书目名称 | Properties of Impurity States in Superlattice Semiconductors | | 编辑 | C. Y. Fong,Inder P. Batra,S. Ciraci | | 视频video | | | 丛书名称 | NATO Science Series B: | | 图书封面 |  | | 描述 | A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el~ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Cha | | 出版日期 | Book 1988 | | 关键词 | electron; microscopy; optics; scattering; semiconductor; transmission electron microscopy | | 版次 | 1 | | doi | https://doi.org/10.1007/978-1-4684-5553-3 | | isbn_softcover | 978-1-4684-5555-7 | | isbn_ebook | 978-1-4684-5553-3Series ISSN 0258-1221 | | issn_series | 0258-1221 | | copyright | Plenum Press, New York 1988 |
The information of publication is updating
|
|
发表于 2025-3-21 17:11:09
