| 书目名称 | Point Defects in Solids | | 副标题 | Volume 2 Semiconduct | | 编辑 | James H. Crawford (Chairman),Lawrence M. Slifkin | | 视频video | | | 图书封面 |  | | 描述 | Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in | | 出版日期 | Book 1975 | | 关键词 | Plantation; behavior; cell; crystal; diffusion; dispersion; electron; magnetism; molecular solid; neutron; pla | | 版次 | 1 | | doi | https://doi.org/10.1007/978-1-4684-0904-8 | | isbn_softcover | 978-1-4684-0906-2 | | isbn_ebook | 978-1-4684-0904-8 | | copyright | Plenum Press, New York 1975 |
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发表于 2025-3-21 17:09:32
