Titlebook: On-Surface Atomic Wires and Logic Gates; Updated in 2016 Proc Marek Kolmer,Christian Joachim Conference proceedings 2017 Springer Internati

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Electronic Properties of a Single Dangling Bond and of Dangling Bond Wires on a Si(001):H Surface,ruct such devices. Using low-temperature scanning tunneling spectroscopy, imaging, density functional theory, and quantum transport calculations, we demonstrate the influence of doping, charging, and buckling on the electronic properties of a single dangling bond and a line of dangling bonds created along a dimer row.

玉米棒子

整顿

Molecule-Latches in Atomic Scale Surface Logic Gates Constructed on Si(100)H,d, keeping the end phenyl unchanged. Among these molecules, 4-acetylalkylphenyl presents the best bistable character on Si(100)H and can perfectly control the conductance of a Si(100)H atomic scale electronic surface interferometer.

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异端

,Surface Hydrogenation of the Si(100)-2×1 and Electronic Properties of Silicon Dangling Bonds on thehat concerns the formation of various phases such as the 3×1 and dihydride. A third method is also detailed and permits the surface hydrogenation at the atomic scale allowing to design some patches on the Si(100) surface of a few nanometer.

沙草纸

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Band Engineering of the Si(001):H Surface by Doping with P and B Atoms, band gap with a significant dispersion along the dimer rows and which overlap well with the DB wire band states, demonstrating the possibility of using patches a B-doped Si(001):H as viable and robust contact pads for DB wires.

事情

,Complex Atomic-Scale Surface Electronic Circuit’s Simulator Including the Pads and the Supporting Se practical size of the total atomic-scale circuit are discussed with the future perspective of developing an atomic-scale circuit simulator. Practical problems like the limitation in number of atoms of circuit builders and software limitations in terms of RAM memory and CPU computing time are also discussed for this objective.

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Conference proceedings 2017le wires and logic gate circuits at the surface of a passivated semi-conductor. Individual chapters cover different aspects of the sample fabrication from research and development point of view, present design and construction as well as microscopic and spectroscopic characteristics of single dangli

生气地

,Surface Hydrogenation of the Si(100)-2×1 and Electronic Properties of Silicon Dangling Bonds on theue is discussed in terms of surface pollution and surface roughness. A basic recipe is given. A second part is devoted to the methods commonly used with vacuum techniques. A discussion is done on the hydrogenation parameters to improve the surface quality at the atomic scale, in particular the one t