Titlebook: On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits; Qiang Cui,Juin J. Liou,Parthasarathy Srivatsan

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ts. Durch das Aufspüren eines vasoaktiven Materials in der Niere, das Renin-Angiotensin, wurde klar, daß es sich bei der Niere nicht nur um ein nützliches Ausscheidungsorgan für über-flüssige oder störende Chemikalien im Körper handelt, sondern um ein Organ, das auch vorrangig auf die Homöostase des

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Basics in ESD Protection of Radio Frequency Integrated Circuits,y threat as it is present in all IC manufacturing processes from mainstream silicon-based complementary metal–oxide–semiconductor (CMOS) to the more exotic compound semiconductor processes such as gallium arsenide (GaAs) or gallium nitride (GaN).

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On-Chip Protection Solution for Radio Frequency Integrated Circuits in Standard CMOS Process,ing sufficient ESD protection for RF and high-speed mixed signal ICs using mainstream CMOS processes imposes a major design and reliability challenge. Ideally ESD protection must be transparent to the protected core circuitry under normal operation conditions. In reality, interaction always exists b

Intuitive

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爆炸

Conclusion, and other high-speed applications. The reliable daily usage of these RF electronics cannot be assured, however, unless the issue of electrostatic discharge (ESD) protection is properly addressed and implemented. As the semiconductor technology continues to scale down, ESD reliability concern is bec

最后一个

On-Chip Protection Solution for Radio Frequency Integrated Circuits in Standard CMOS Process,ges in RF ESD design, as a low capacitance typically means a small device area and consequently a poor robustness of the ESD protection device. Other concerns in ESD design for RF ICs include the signal distortion due to the nonlinearity of the parasitic capacitance, the noise coupling as well as no

penance

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