| 书目名称 | Neutron-Transmutation-Doped Silicon | | 编辑 | Jens Guldberg (Conference Chairman) | | 视频video | | | 图书封面 |  | | 描述 | This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces‘s‘. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of t | | 出版日期 | Book 1981 | | 关键词 | Thyristor; Wafer; control; defects; design; development; energy; future; high voltage; industry; optimization; | | 版次 | 1 | | doi | https://doi.org/10.1007/978-1-4613-3261-9 | | isbn_softcover | 978-1-4613-3263-3 | | isbn_ebook | 978-1-4613-3261-9 | | copyright | Plenum Press, New York 1981 |
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发表于 2025-3-21 19:14:53
