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Titlebook: Methods and Materials in Microelectronic Technology; Joachim Bargon (Symposium Chairman) Book 1984 Springer Science+Business Media New Yor

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书目名称Methods and Materials in Microelectronic Technology
编辑Joachim Bargon (Symposium Chairman)
视频video
丛书名称The IBM Research Symposia Series
图书封面Titlebook: Methods and Materials in Microelectronic Technology;  Joachim Bargon (Symposium Chairman) Book 1984 Springer Science+Business Media New Yor
描述The papers collected in this volume were presented at the International Symposium on Methods and Materials in Microelectronic Technology. This symposium was sponsored by IBM Germany, and it was held September 29 - October 1, 1982, in Bad Neuenahr, West Germany. The progress of semiconductor and microelectronic technology has become so rapid and the field so sophisticated that it is imperative to exchange the latest insight gained as frequently as it can be accomplished. In addition, it is peculiar for this field that the bulk of the investigations are carried out at industrial research and development laboratories, which makes some of the results less readily accessible. Because of these circumstances, the academic community, which among other things, is supposed to communicate the prog­ ress in this field to students of different disciplines, finds it rather difficult to stay properly informed. It was the intent of this IBM sponsored symposium to bring together key scientists from academic institutions, primarily from Europe, with principal investigators of the industrial scene. Accordingly, this symposium exposed technologists to scientists and vice versa. Scientific advances oft
出版日期Book 1984
关键词development; lead; paper; semiconductor
版次1
doihttps://doi.org/10.1007/978-1-4684-4847-4
isbn_softcover978-1-4684-4849-8
isbn_ebook978-1-4684-4847-4
copyrightSpringer Science+Business Media New York 1984
The information of publication is updating

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High Performance Cooling and Large Scale Integration, a proportionate increase in power per chip. The trade-off between power and speed means that the limited ability of technology to remove heat at high density from compact structures leads to a lower power dissipation per gate at higher levels of integrations and lower speed.
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Reactive Ion Etching and Related Polymerization Processes, progress that has been made in understanding the role which ion-surface interactions play in increasing the rates of surface etching processes and how this relates to control over etch feature geometry.
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Silicide Contact and Gate in Microelectronic Devices,A brief review about silicide metallization technology, i.e. the use of transition metal silicides as contacts and gates in large scale integrated silicon devices is presented and a short discussion about the low temperature redistribution of dopant induced by a moving silicidesilicon interface is included.
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