| 书目名称 | Long-Term Reliability of Nanometer VLSI Systems | | 副标题 | Modeling, Analysis a | | 编辑 | Sheldon Tan,Mehdi Tahoori,Saman Kiamehr | | 视频video | http://file.papertrans.cn/589/588579/588579.mp4 | | 概述 | Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models.Introduces a dynamic EM model to address transient stress evolution, i | | 图书封面 |  | | 描述 | This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques..Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models;.Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;.Presents a cross-layer approach to transistor aging modeling, | | 出版日期 | Book 2019 | | 关键词 | Reliability in nanometer integrated systems; Bias Temperature Instability for Devices and Circuits; El | | 版次 | 1 | | doi | https://doi.org/10.1007/978-3-030-26172-6 | | isbn_softcover | 978-3-030-26174-0 | | isbn_ebook | 978-3-030-26172-6 | | copyright | Springer Nature Switzerland AG 2019 |
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