找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Large Scale Integrated Circuits Technology: State of the Art and Prospects; Proceedings of the N Leo Esaki,Giovanni Soncini Conference proc

[复制链接]
楼主: 漠不关心
发表于 2025-3-25 03:34:15 | 显示全部楼层
发表于 2025-3-25 09:10:19 | 显示全部楼层
LSI: Prospects and Problemsional capability. Integration and miniaturization are the routes by which this is accomplished. Progress in integration and miniaturization involves solving a continual series of technological problems in lithography and chemical process technology.
发表于 2025-3-25 15:04:25 | 显示全部楼层
Silicon Crystals for Large Scale Integrated Circuitsd for electronic-grade poly-crystalline silicon., which in 1980 has already exceeded 2000 tons/year (Fig. 1). The major driving force of the electronic industry is integrated circuits, which require high quality large diameter (75–125 mm) single crystalline wafers and ingots.
发表于 2025-3-25 18:05:36 | 显示全部楼层
Structural Techniques for Bulk Defects Characterizationaphy, transmission and scanning electron microscopy. Examples of defects analysis are reported concerning the characterization of the defects introduced by the phosphorous predeposition in Si and the study of dark current sources in charge-coupled devices. A final section is dedicated to a more deta
发表于 2025-3-25 22:13:30 | 显示全部楼层
发表于 2025-3-26 00:39:36 | 显示全部楼层
发表于 2025-3-26 06:38:15 | 显示全部楼层
Silicon Epitaxyss for device technology are discussed in other sections of this lecture series. Here we will concentrate on epitaxy by chemical vapor deposition (CVD), which is to be contrasted with physical vapor deposition where atoms to be deposited are emitted by a heated source and are incident on the substra
发表于 2025-3-26 11:17:27 | 显示全部楼层
Computer Simulation of Complete IC Fabrication Processon which make it possible to numerically simulate multiple diffused species -- arsenic-boron and phosphorus-boron -- as well as redistribution effects associated with moving boundaries in oxidation and epitaxy will be discussed.
发表于 2025-3-26 12:54:28 | 显示全部楼层
Beam Processing Techniques Applied to Crystal Silicon Substratestemperature fabrication steps are rate determined by a solid-state diffusion process (e.g. oxidation, dopant diffusion and redistribution, radiation damage annealing, gettering,...) whose diffusion constant is exponentially dependent on temperature with activation energies of the order of a few eV.
发表于 2025-3-26 19:26:33 | 显示全部楼层
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-6-24 01:19
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表