Titlebook: Ion Implantation Techniques; Lectures given at th Heiner Ryssel,Hans Glawischnig Conference proceedings 1982 Springer-Verlag Berlin Heidelb

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书目名称Ion Implantation Techniques影响因子(影响力)




书目名称Ion Implantation Techniques影响因子(影响力)学科排名




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书目名称Ion Implantation Techniques网络公开度学科排名




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书目名称Ion Implantation Techniques被引频次学科排名




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书目名称Ion Implantation Techniques读者反馈学科排名

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Electrical Measuring Techniquesable information regarding the energy and purity of the ion beam. The techniques are discussed mainly with respect to measurements on implanted silicon wafers but they may be applied more generally to any semiconductor.

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Faraday Cup Designs for Ion Implantation flux and areal distribution of the dopant material. A given target response to the incident ions can be used as a continuous monitor of the implant status and, under proper conditions, can provide a means for closed-loop process control.

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Range Distributionstended to calculate higher moments of the range distributions. Winterbon [3] calculated 4 moments of range distributions for many ion- target combinations; however, no easily accessible tables or formulas (such as those by Gibbons [4], Smith [5],and Biersack [29]) are available. Only Gibbons gives an estimate of the third moment.

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Standard High-Voltage Power Supplies for Ion Implantationmake a decision on the standardization of the power supply. Standardization means compromising and giving up the possibility of covering the entire range of users electrical data. In our standard line of high-voltage dc power supplies, special consideration is given to the following basic design features:

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Springer Series in Electronics and Photonicshttp://image.papertrans.cn/i/image/475170.jpg

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https://doi.org/10.1007/978-3-642-68779-2Absorption; Apertur; Plasmat; computer; design; development; machine; material; mechanisms; model; production;

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Ion Implantation System Concepts the presently available commercial equipment is presented. The system-limiting aspects, such as throughput, uniformity, wafer heating, energy range, wafer size, charge-up, and contamination, are reported in detail. Finally, some remarks on the operation and control of an ion implanter are made.

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