| 书目名称 | Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology No |
| 编辑 | Guilei Wang |
| 视频video | |
| 概述 | Nominated as an outstanding PhD thesis by the Chinese Academy of Sciences.Reports on important, advanced applications of selective epitaxy on source and drain technology for the 22 nm CMOS node and be |
| 丛书名称 | Springer Theses |
| 图书封面 |  |
| 描述 | This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. .As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. .The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its patterndependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.. |
| 出版日期 | Book 2019 |
| 关键词 | SiGe; RPCVD; source/drain technology; selective epitaxy; technology nodes; strain; pattern dependency |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-981-15-0046-6 |
| isbn_softcover | 978-981-15-0048-0 |
| isbn_ebook | 978-981-15-0046-6Series ISSN 2190-5053 Series E-ISSN 2190-5061 |
| issn_series | 2190-5053 |
| copyright | Springer Nature Singapore Pte Ltd. 2019 |
发表于 2025-3-21 16:05:34
