Titlebook: Interfaces, Quantum Wells, and Superlattices; C. Richard Leavens,Roger Taylor Book 19881st edition Plenum Press, New York 1988 Doping.Exci

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Stark Shifts and Excitonic Effects in Semiconductor Quantum Wells and Superlattices,stence of bound electron-hole pairs: the excitons. The excitons are more stable in quantum wells than in bulk materials, due to their confinement in a narrow slab by large potential barriers. They can also be shifted in energy by an external electric field without being bleached. These two factors explain their technological relevance.

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Ultrafast Nonlinear Optical Phenomena in Semiconductor Quantum Wells, a fertile ground for novel physics, helping to increase our understanding of basic light-matter interactions and many-body effects in open two-component Coulomb systems in semiconductors. It is this rapidly evolving field that is the subject of the present paper.

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Why Interfaces, Quantum Wells and Superlattices? Some Comments,f Schroedinger’s equation describes the physics involved. We are reasonably sure of that. What we are trying to put together is the simplest description of the real situation so that we may see which aspect of the physics dominates the problem. From an historical point of view, Bloch’s theorem made

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Molecular Beam Epitaxy,ility has emerged from a thorough understanding of the fundamental factors controlling growth and dopant incorporation obtained using modulated molecular beam spectroscopy, reflection high energy electron diffraction and Monte-Carlo studies. In this article I will concentrate on the growth and inter

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The Determination of Subband Energies, schemes that have been used to determine these 2D bands in a variety of physical semiconductor-structures. The cases considered are exemplary and include those studied in past years as well as current challenges in the field of subband spectroscopy.