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Titlebook: III-Nitride Ultraviolet Emitters; Technology and Appli Michael Kneissl,Jens Rass Book 2016 Springer International Publishing Switzerland 20

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书目名称III-Nitride Ultraviolet Emitters
副标题Technology and Appli
编辑Michael Kneissl,Jens Rass
视频video
概述Gives a comprehensive overview of the field of semiconductor UV emitters.Describes manufacturing of III-nitride ultraviolet LEDs and lasers.Also covers recent applications, such as visible blind UV ph
丛书名称Springer Series in Materials Science
图书封面Titlebook: III-Nitride Ultraviolet Emitters; Technology and Appli Michael Kneissl,Jens Rass Book 2016 Springer International Publishing Switzerland 20
描述This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of InAlGaN materials as well as various optoelectronic components. In addition, the book gives an overview of a number of key application areas for UV emitters and detectors, including water purification, phototherapy, sensing, and UV curing. The book is written for researchers and graduate level students in the area of semiconductor materials, optoelectronics and devices as well as developers and engineers in the various application fields of UV emitters and detectors.
出版日期Book 2016
关键词Dislocations and Point Defect in UV Emitter Material; Group III-nitride Materials; Growth and Structur
版次1
doihttps://doi.org/10.1007/978-3-319-24100-5
isbn_softcover978-3-319-37127-6
isbn_ebook978-3-319-24100-5Series ISSN 0933-033X Series E-ISSN 2196-2812
issn_series 0933-033X
copyrightSpringer International Publishing Switzerland 2016
The information of publication is updating

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Growth Techniques of AlN/AlGaN and Development of High-Efficiency Deep-Ultraviolet Light-Emitting D for wide-bandgap AlN and AlGaN materials are discussed. DUV LEDs in the spectral range between 222 and 351 nm have been demonstrated. Significant increases in the internal quantum efficiency (IQE) of AlGaN quantum wells (QWs) have been achieved by growth on low-threading dislocation-density (TDD) A
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UV Emitters in Gas Sensing Applications, standard broadband photodiodes (PD). These low-cost components can be arranged in a simple design which produces cost-effective but high-resolution sensors compared with current state-of-the-art measurement systems. Broad UV absorption lines/bands are well suited for UV emitter-based sensing.
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