找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Handbook of Spintronics; Yongbing Xu,David D. Awschalom,Junsaku Nitta Reference work 2016 Springer Science+Business Media Dordrecht 2016 C

[复制链接]
楼主: ossicles
发表于 2025-3-26 22:44:15 | 显示全部楼层
发表于 2025-3-27 04:46:58 | 显示全部楼层
发表于 2025-3-27 07:22:52 | 显示全部楼层
CPP-GMR: Materials and Propertiesgeometry) can give better access to the fundamental physics underlying GMR than measurements with the more usual current flow in the layer planes (CIP geometry). Because the same measuring current passes through all of the layers, the CPP-MR can often be described by simpler equations that allow sep
发表于 2025-3-27 12:14:33 | 显示全部楼层
TMR and Al-O Based Magnetic Tunneling Junctions temperature (RT). AlO. is easily formed by oxidizing a pre-deposited Al layer. The MTJ with FM/I/FM sandwich core structure and the spin-dependent tunneling transport properties drew a wide range of interest resulting the so far largest magnetoresistance (MR) ratio of 81% at RT and 107% at 4.2 K in
发表于 2025-3-27 16:21:24 | 显示全部楼层
Magnetic Nanoparticles and Granular Thin Filmss, nanowires, thin films, and bulk materials made of nanoscale building blocks or consist of nanoscale structures. The properties of nanostructured materials are so different from those of the bulk counterparts, especially in terms of magnetism. In this chapter, we will introduce some representative
发表于 2025-3-27 20:55:00 | 显示全部楼层
Exchange Bias Material: FeMnferromagnet material systems, both in experiments and in theory. Among many antiferromagnetic materials, metastable γ-FeMn emerges as the ideal material to reveal the physics mechanism behind the EB. In this chapter, the EB properties of FeMn-based bilayers are introduced by starting with the analys
发表于 2025-3-27 22:48:50 | 显示全部楼层
Magnetic/III-V Semiconductor Based Hybrid Structuress data storage industries. The second generation spintronics based on magnetic-semiconductor hybrid structures aims to develop new spin based devices such as spin transistors and spin logic, which will not just improve the existing capabilities of electronic transistors, but will have new functional
发表于 2025-3-28 02:34:51 | 显示全部楼层
发表于 2025-3-28 07:19:27 | 显示全部楼层
发表于 2025-3-28 14:12:11 | 显示全部楼层
Electrical Spin Injection into InGaAs Quantum Dots/AlGaAs spin light-emitting diode (spin-LED) structures is summarized here. The emissions from the ensemble QDs are efficient and broad in energy due to inhomogeneous broadening (QD size distribution). The circular polarization was measured as functions of current, magnetic field, and temperature. E
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-5-18 11:42
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表