Titlebook: ;

aggression

书目名称GaN Technology影响因子(影响力)




书目名称GaN Technology影响因子(影响力)学科排名




书目名称GaN Technology网络公开度




书目名称GaN Technology网络公开度学科排名




书目名称GaN Technology被引频次




书目名称GaN Technology被引频次学科排名




书目名称GaN Technology年度引用




书目名称GaN Technology年度引用学科排名




书目名称GaN Technology读者反馈




书目名称GaN Technology读者反馈学科排名

decipher

冬眠

https://doi.org/10.1007/978-3-476-05473-9igh Electron Mobility Transistors (GaN HEMTs) in power electronics. GaN technology offers unprecedented advantages over traditional silicon-based devices, including higher efficiency, faster switching speeds, and reduced losses. Chowdhury emphasizes GaN’s potential to revolutionize diverse sectors s

gusher

把…比做

Zusammenfassung, Fazit und Ausblick,d Ferdinando Iucolano), explores the complexities of Gallium Nitride (GaN) device fabrication. Daryanani delves into epitaxial growth techniques, defect characterization, and the role of ion implantation in optimizing GaN power devices. The subsequent section by STMicroelectronics researchers provid

激怒

激怒

https://doi.org/10.1007/978-3-531-93193-7andro Pozo, and colleagues from Efficient Power Conversion highlight GaN’s efficacy in buck and LLC converters. Stephen Colino, John Glaser, and Marco Palma explore GaN’s role in lidar systems and motor drive applications, respectively, emphasizing efficiency gains. Martin Wattenberg from Infineon T

surrogate

声明

拖网

https://doi.org/10.1007/978-3-322-91071-4 devices relative to competing technologies like silicon superjunction and silicon carbide (SiC) in the 600 V/650 V class. They explore various GaN-based device concepts, including vertical and lateral designs, and discuss their characteristics and value propositions across different applications. T