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Titlebook: Giant Magnetoresistance (GMR) Sensors; From Basis to State- Candid Reig,Susana Cardoso,Subhas Chandra Mukhopad Book 2013 Springer-Verlag Be

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发表于 2025-3-21 17:28:55 | 显示全部楼层 |阅读模式
书目名称Giant Magnetoresistance (GMR) Sensors
副标题From Basis to State-
编辑Candid Reig,Susana Cardoso,Subhas Chandra Mukhopad
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概述Reference in the field of GMR technology.Presents applications of GMR based sensing approaches in the fields of protein sequentiation, brain activity detection, electrical current sensing, or traffic
丛书名称Smart Sensors, Measurement and Instrumentation
图书封面Titlebook: Giant Magnetoresistance (GMR) Sensors; From Basis to State- Candid Reig,Susana Cardoso,Subhas Chandra Mukhopad Book 2013 Springer-Verlag Be
描述.Since the discovery of the giant magnetoresistance (GMR) effect in 1988, .spintronics. has been presented as a new technology paradigm, awarded by the Nobel Prize in Physics in 2007. Initially used in read heads of hard disk drives, and while disputing a piece of the market to the flash memories, GMR devices have broadened their range of usage by growing towards magnetic field sensing applications in a huge range of scenarios. Potential applications at the time of the discovery have become real in the last two decades. Definitively, GMR was born to stand..In this sense, selected successful approaches of GMR based sensors in different applications: space, automotive, microelectronics, biotechnology … are collected in the present book. While keeping a practical orientation, the fundamentals as well as the current trends and challenges of this technology are also analyzed. In this sense, state of the art contributions from academy and industry can be found through the contents. .This book can be used by starting researchers, postgraduate students and multidisciplinary scientists in order to have a reference text in this topical fascinating field..
出版日期Book 2013
关键词Applications; Biosensors; GMR; Giant Magnetoresistance; Magnetic Sensors; Magnetic Tunnel Junction (MTJ);
版次1
doihttps://doi.org/10.1007/978-3-642-37172-1
isbn_softcover978-3-642-44810-2
isbn_ebook978-3-642-37172-1Series ISSN 2194-8402 Series E-ISSN 2194-8410
issn_series 2194-8402
copyrightSpringer-Verlag Berlin Heidelberg 2013
The information of publication is updating

书目名称Giant Magnetoresistance (GMR) Sensors影响因子(影响力)




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书目名称Giant Magnetoresistance (GMR) Sensors读者反馈学科排名




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发表于 2025-3-21 20:44:48 | 显示全部楼层
Book 2013tate of the art contributions from academy and industry can be found through the contents. .This book can be used by starting researchers, postgraduate students and multidisciplinary scientists in order to have a reference text in this topical fascinating field..
发表于 2025-3-22 03:24:45 | 显示全部楼层
https://doi.org/10.1007/978-3-030-35020-8 Second Generation Current Conveyor (CCII) the active device). The described interfaces can be easily fabricated both as prototype boards, for a fast characterization, and as integrated circuits, also using modern microelectronics design techniques, in a standard CMOS technology with Low Voltage (LV
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Resistive Sensor Interfacing, Second Generation Current Conveyor (CCII) the active device). The described interfaces can be easily fabricated both as prototype boards, for a fast characterization, and as integrated circuits, also using modern microelectronics design techniques, in a standard CMOS technology with Low Voltage (LV
发表于 2025-3-22 19:54:33 | 显示全部楼层
GMR Based Sensors for IC Current Monitoring,be potentially used in those scenarios that require a detection or measurement of nonintrusive power by the indirect measurement of the magnetic field..In this chapter, an overview to the current research regarding the application of GMR sensors in the measurement of electrical currents at the integ
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Subhendu Kumar Otta,Sudama Swainesistance and spin transfer torque.This presentation aims at describing the concepts in the simplest way by recalling their historical development. The correlated technical improvements mostly concerning material issues are also described showing their evolution with time.
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Krupesha Sharma S. R.,Sumithra T. G.and encapsulation steps are found in both parts. However, characteristics related to the specific materials involved in the GMR technology recommend the use of some particular techniques. In this chapter, we focus on these specific methods, while keeping in mind the interest in merging standard CMOS
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