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Titlebook: GaAs Devices and Circuits; Michael Shur Book 1987 Springer Science+Business Media New York 1987 Modulation.integrated circuit.logic.modeli

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发表于 2025-3-21 17:44:56 | 显示全部楼层 |阅读模式
书目名称GaAs Devices and Circuits
编辑Michael Shur
视频video
丛书名称Microdevices
图书封面Titlebook: GaAs Devices and Circuits;  Michael Shur Book 1987 Springer Science+Business Media New York 1987 Modulation.integrated circuit.logic.modeli
描述GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi­ cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their con
出版日期Book 1987
关键词Modulation; integrated circuit; logic; modeling; transistor
版次1
doihttps://doi.org/10.1007/978-1-4899-1989-2
isbn_softcover978-1-4899-1991-5
isbn_ebook978-1-4899-1989-2
copyrightSpringer Science+Business Media New York 1987
The information of publication is updating

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Book 1987-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi­ cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their con
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colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi­ cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their con978-1-4899-1991-5978-1-4899-1989-2
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Equivalents of the Axiom of Choiceloped. The basic advantages of these devices include a higher electron velocity, leading to smaller transit time and faster response, and sxemi-insulating GaAs substrates, which allow one to decrease the parasitic capacitances and simplify the fabrication process.
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Modulation Doped Field Effect Transistors,ps at 77 K have been demonstrated. MODFET frequency dividers have operated at up to 10.1 GHz input frequency. A 4-kb MODFET RAM has also been fabricated. (A more detailed discussion of the MODFET IC performance may be found in Chapter 9.)
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