| 书目名称 | Fundamental Aspects of Silicon Oxidation |
| 编辑 | Yves J. Chabal |
| 视频video | |
| 概述 | This is the only book that addresses fundamental issues in silicon oxidation at a level that will remain useful for 10-20 years.Because it combines both state-of-the-art experimental approaches and th |
| 丛书名称 | Springer Series in Materials Science |
| 图书封面 |  |
| 描述 | The idea for a book dealing specifically with elementary processes in silicon oxidation was formulated after a stimulating symposium that I organized at the American Physical Society meeting in March, 1998. The symposium, en titled "Dynamics of silicon etching and oxidation", explored the mechanisms governing silicon oxidation. With three experimental talks (Hines, Weldon and Gibson) and two theoretical presentations (Pasquarello and Pantelides), it provided a good cross-section of the recent efforts to characterize the in terfacial region of silicon oxide grown on silicon. The novelty of this work comes from the present experimental and theo retical advances that allow the investigation of the formation of ultra-thin silicon oxides. Although structural characterization of bulk silicon oxides and electrical characterization of thin oxides and their interfaces with silicon have produced an extensive body of work over more than forty years, a mechanis tic understanding of the initial oxidation processes has remained elusive. In the past, both the experimental and theoretical efforts have been thwarted by the complexity of dealing with the formation of a mostly amorphous oxide on |
| 出版日期 | Book 2001 |
| 关键词 | EELS; STEM; chemistry; dynamics; electron energy loss spectroscopy; electron microscopy; electron spectros |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-3-642-56711-7 |
| isbn_softcover | 978-3-642-62583-1 |
| isbn_ebook | 978-3-642-56711-7Series ISSN 0933-033X Series E-ISSN 2196-2812 |
| issn_series | 0933-033X |
| copyright | Springer-Verlag Berlin Heidelberg 2001 |
发表于 2025-3-21 16:33:18
