| 书目名称 | Ferroelectric-Gate Field Effect Transistor Memories |
| 副标题 | Device Physics and A |
| 编辑 | Byung-Eun Park,Hiroshi Ishiwara,Sung-Min Yoon |
| 视频video | |
| 概述 | Describes the development history, materials, fabrication methodologies, technical challenges and promising applications of FET-type ferroelectric memory devices.Presents a comprehensive review of pas |
| 丛书名称 | Topics in Applied Physics |
| 图书封面 |  |
| 描述 | .This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. ..Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time...This book aims to provide readers with the development history, technical issues, fabrication methodol |
| 出版日期 | Book 20161st edition |
| 关键词 | Ferroelectric-gate Field Effect Transistors; Field Effect Transistors with flexible; Inorganic Ferroel |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-94-024-0841-6 |
| isbn_softcover | 978-94-024-1416-5 |
| isbn_ebook | 978-94-024-0841-6Series ISSN 0303-4216 Series E-ISSN 1437-0859 |
| issn_series | 0303-4216 |
| copyright | Springer Science+Business Media Dordrecht 2016 |
发表于 2025-3-21 18:44:11
