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Titlebook: Evolution of Thin Film Morphology; Modeling and Simulat Matthew Pelliccione,Toh-Ming Lu Book 20081st edition Springer-Verlag New York 2008

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Solid-on-Solid Modelsed in modeling thin film growth. More complicated models, including ballistic aggregation models, have been of interest as well, but illustrating the formulation and use of solid-on-solid models first gives insight into the advantages and drawbacks of both types of models. For more discussion regarding solid-on-solid models, see [40].
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Erfolgsstrategien für Automobilzuliefererhe electrical conductivity of thin metal films depends very much on surface and interface roughness [135], and the reliability of a Si MOSFET (metal-oxide-semiconductor fieldeffect transistor)channel depends on the roughness of the gate oxide—silicon interface [82]. Also, interface roughness has a p
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Nachhaltigkeit und Werte für den Erfolg and oblique angle deposition. Most local models predict a relatively small value for β, as represented by the small spread of β for local models, which is evident from Table 3.1. Clearly, local models are not able to explain many of the experimental measurements of β. To explain these results, the
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https://doi.org/10.1007/978-3-663-07203-4e same graph, we also display a characteristic range of β values reported in experimental papers in the literature for different deposition techniques including thermal evaporation, sputter deposition, chemical vapor deposition, and oblique angle deposition. It appears that local models account for
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0933-033X toms are deposited on a surface, atoms do not arrive at the surface at the same time uniformly across the surface. This random ?uctuation, or noise, which is inherent to the deposition process, may create surfa978-1-4419-2580-0978-0-387-75109-2Series ISSN 0933-033X Series E-ISSN 2196-2812
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