Titlebook: Electronic Materials; From Silicon to Orga L. S. Miller,J. B. Mullin Book 1991 Springer Science+Business Media New York 1991 electronic mat

清楚明确

书目名称Electronic Materials影响因子(影响力)




书目名称Electronic Materials影响因子(影响力)学科排名




书目名称Electronic Materials网络公开度




书目名称Electronic Materials网络公开度学科排名




书目名称Electronic Materials被引频次




书目名称Electronic Materials被引频次学科排名




书目名称Electronic Materials年度引用




书目名称Electronic Materials年度引用学科排名




书目名称Electronic Materials读者反馈




书目名称Electronic Materials读者反馈学科排名

混乱生活

Electron Energy Bands,ations of semiconductors is the fact that the electrons involved in the bonding (or in other allowed states) can generally be considered to occupy delocalized states. That is, the electrons cannot be associated with one particular atomic orbital; the electron states extend throughout the whole cryst

格言

Relinquish

Interfaces and Low-Dimensional Structures, this is a very good approximation since the dimensions of the materials we work with are generally large compared with the lattice spacing and the defects to the crystal periodicity few enough to be treated as perturbations. One area where these assumptions are not valid, however, is at the boundar

飞镖

Key Optoelectronic Devices,ow to utilize more fully the extensive range of properties it offers. Optical fiber communications systems that begin to utilize the enormous bandwidth (10.–10. Hz) of light are now being installed worldwide, the energy of light is being harnessed by fabricating solar cells, and the power of light i

增减字母法

Thermodynamics and Defect Chemistry of Compound Semiconductors,set for the crystal grower for a number of reasons. Firstly, it enables one to determine the range of experimental conditions under which the required crystalline phase is the thermodynamically most stable phase. Secondly, where the purpose is to grow an alloy crystal (such as a ternary III-V compou

增减字母法

Single Crystal Growth I: Melt Growth,ometric or nearly so. The production of semiconductors in single-crystal form is a core requirement of almost all semiconductor device technology. As a consequence, the whole field of crystal growth technology is strongly device driven and sensitive to commercial pressures related to production effi

压舱物

archetype

Amorphous Silicon-Electronics into the 21st Century,ductors such as silicon. These developments were possible because the electrical conductivity of crystalline silicon can be controlled over many orders of magnitude by doping, that is, by the addition during growth of the crystal of small concentrations of impurities. However, there are a number of

myopia