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Titlebook: Electronic Band Structure and Its Applications; Proceedings of the I M. Yussouff Conference proceedings 1987 Springer-Verlag Berlin Heidelb

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书目名称Electronic Band Structure and Its Applications
副标题Proceedings of the I
编辑M. Yussouff
视频video
丛书名称Lecture Notes in Physics
图书封面Titlebook: Electronic Band Structure and Its Applications; Proceedings of the I M. Yussouff Conference proceedings 1987 Springer-Verlag Berlin Heidelb
描述This volume gives an up-to-date overview of theoretical and experimental methods of studying the electronic band structure. Various formalisms for explicit calculations and many details of useful applications, particularly to alloys and semiconductors, are presented. The contributions cover the following subjects: alloy phase diagrams, density functionals; disordered alloys; heavy fermions; impurities in metals and semiconductors; linearize band structure calculations; magnetism in alloys; modern theory of alloy band structure; momentum densities in metals and alloys; photoemission; quasi-particles and properties of semiconductors; the recursion method and transport properties of crystals and quasi-crystals.
出版日期Conference proceedings 1987
关键词band structure; band theory; crystal; electron; hydrogen; magnetism; quasicrystal; semiconductor
版次1
doihttps://doi.org/10.1007/3-540-18098-2
isbn_ebook978-3-540-47757-0Series ISSN 0075-8450 Series E-ISSN 1616-6361
issn_series 0075-8450
copyrightSpringer-Verlag Berlin Heidelberg 1987
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发表于 2025-3-21 20:18:26 | 显示全部楼层
https://doi.org/10.1007/978-3-663-01367-9I shall illustrate this by picking three specific examples: broadening of the gap level associated with the defect, fractal character of the defect wave-function, and metastability of some defect centers.
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Erratum to: Quantitatives Denken also reported estimation of the field of forces on nearest metallic neighbours to the hydrogen atom. The associated field of displacement is more difficult to obtain because it relies on the unknown force constants of the alloys. The determination of these force contants remains an objective for the future.
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Deep defects in semiconductor alloys : Theoretical aspects,I shall illustrate this by picking three specific examples: broadening of the gap level associated with the defect, fractal character of the defect wave-function, and metastability of some defect centers.
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https://doi.org/10.1057/978-1-137-57346-9 as well as large gap ionic compounds showed that the effects of local fields and dynamical screening are crucial for accurate results. With no empirical input, the calculated band gaps, optical transitions, and band dispersions are all within a few percent of experimental values.
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