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Titlebook: Efficient Sensor Interfaces, Advanced Amplifiers and Low Power RF Systems; Advances in Analog C Kofi A.A. Makinwa,Andrea Baschirotto,Pieter

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楼主: whiplash
发表于 2025-3-26 23:38:14 | 显示全部楼层
Ultra Low Power Wireless SoC Design for Wearable BANnd circuit building blocks will be covered, and presented in conjunction of a practical case-study of a complete multi-standard WBAN SoC fabricated in 65 nm CMOS technology operating in the 2.36–2.5 GHz frequency band.
发表于 2025-3-27 04:45:05 | 显示全部楼层
发表于 2025-3-27 06:34:23 | 显示全部楼层
Ultra Low Power Low Voltage Capacitive Preamplifier for Audio Applicationture for the loop is proposed. The most critical analog blocks, such as first amplification stage, loop filter and biasing circuitry, are then investigated in more details, followed by measurement results.
发表于 2025-3-27 11:53:03 | 显示全部楼层
Efficiency Enhancement Techniques for RF and MM-Wave Power Amplifiershis challenge, several power combining structures are introduced. Next, some RF PA architectures are presented to improve the efficiency at power back-off. Finally, some recently introduced architectures are discussed that use the advanced signal processing capabilities of CMOS to deal with this efficiency-linearity trade-off in RF PA design.
发表于 2025-3-27 16:44:42 | 显示全部楼层
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发表于 2025-3-28 00:20:49 | 显示全部楼层
发表于 2025-3-28 04:27:49 | 显示全部楼层
https://doi.org/10.1007/978-3-662-37022-3ers which can wake up in just 5 μs is presented. In addition, these synthesizers can also support high data rates as compared to the PLL based radios, thereby offering the possibility to increase the rate of duty cycling and thus further lowering the average energy dissipation.
发表于 2025-3-28 07:04:01 | 显示全部楼层
https://doi.org/10.1007/978-3-662-38159-5nd circuit building blocks will be covered, and presented in conjunction of a practical case-study of a complete multi-standard WBAN SoC fabricated in 65 nm CMOS technology operating in the 2.36–2.5 GHz frequency band.
发表于 2025-3-28 11:24:00 | 显示全部楼层
https://doi.org/10.1007/978-3-662-39555-499.8 dB, and a SNDR of 91 dB for a maximum input 2.2 V. and a bandwidth of 250 Hz. Fabricated in 65 nm CMOS and operated from a 1.2 V power supply, the IADC’s core area is 0.2 mm., and it consumes only 10.7 μW. The measured FoMs are 0.76 pJ/conv.step and 173.5 dB, both among the best reported result
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