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Titlebook: Dry Etching for VLSI; A. J. Roosmalen,J. A. G. Baggerman,S. J. H. Brader Book 1991 Springer Science+Business Media New York 1991 Plasma.VL

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书目名称Dry Etching for VLSI
编辑A. J. Roosmalen,J. A. G. Baggerman,S. J. H. Brader
视频video
丛书名称Updates in Applied Physics and Electrical Technology
图书封面Titlebook: Dry Etching for VLSI;  A. J. Roosmalen,J. A. G. Baggerman,S. J. H. Brader Book 1991 Springer Science+Business Media New York 1991 Plasma.VL
描述This book has been written as part of a series of scientific books being published by Plenum Press. The scope of the series is to review a chosen topic in each volume. To supplement this information, the abstracts to the most important references cited in the text are reprinted, thus allowing the reader to find in-depth material without having to refer to many additional publications. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Although a number of books have appeared dealing with this area of physics and chemistry, these all deal with parts of the field. This book is unique in that it gives a compact, yet complete, in-depth overview of fundamentals, systems, processes, tools, and applications of etching with gas plasmas for VLSI. Examples are given throughout the fundamental sections, in order to give the reader a better insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referenc
出版日期Book 1991
关键词Plasma; VLSI; electrical engineering; material; model; semiconductor
版次1
doihttps://doi.org/10.1007/978-1-4899-2566-4
isbn_softcover978-1-4899-2568-8
isbn_ebook978-1-4899-2566-4
copyrightSpringer Science+Business Media New York 1991
The information of publication is updating

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https://doi.org/10.1007/978-3-030-36766-4ng. In fact, certain diagnostic methods are a prerequisite for precise control of etching processes. Over the years a large number of techniques have been developed; these usually require some in situ “sensor” to measure the etch rates or to detect the endpoint when a film has been etched through to expose the underlying material.
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The Plasma State,remely low, namely about 10. at room temperature. Not much, but it is there, and room-temperature air is certainly not a plasma. A useful definition for the plasma state has been postulated by Chen [23],
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