| 书目名称 | Defects and Impurities in Silicon Materials |
| 副标题 | An Introduction to A |
| 编辑 | Yutaka Yoshida,Guido Langouche |
| 视频video | |
| 概述 | Provides the basic physics behind the modeling and evaluation techniques used in silicon materials science.Presents atomistic insight into the defects and the impurities in silicon materials such as U |
| 丛书名称 | Lecture Notes in Physics |
| 图书封面 |  |
| 描述 | This book emphasizesthe importance of the fascinating atomistic insights into the defects and theimpurities as well as the dynamic behaviors in silicon materials, which havebecome more directly accessible over the past 20 years. Such progress has beenmade possible by newly developed experimental methods, first principle theories,and computer simulation techniques. .The book is aimed at young researchers, scientists, and technicians in related industries. The mainpurposes are to provide readers with 1) the basic physics behind defects insilicon materials, 2) the atomistic modeling as well as the characterizationtechniques related to defects and impurities in silicon materials, and 3) anoverview of the wide range of the research fields involved.. |
| 出版日期 | Book 2015 |
| 关键词 | Atomistic Insights into Defects and Impurities; Atomistic Scale Modeling Techniques; Computer Simulati |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-4-431-55800-2 |
| isbn_softcover | 978-4-431-55799-9 |
| isbn_ebook | 978-4-431-55800-2Series ISSN 0075-8450 Series E-ISSN 1616-6361 |
| issn_series | 0075-8450 |
| copyright | Springer Japan 2015 |
发表于 2025-3-21 17:43:30
