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Titlebook: Crystal Growth; Theory and Technique C. H. L. Goodman Book 1978 Springer Science+Business Media New York 1978 crystal.fields.growth.informa

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发表于 2025-3-21 19:28:22 | 显示全部楼层 |阅读模式
书目名称Crystal Growth
副标题Theory and Technique
编辑C. H. L. Goodman
视频video
图书封面Titlebook: Crystal Growth; Theory and Technique C. H. L. Goodman Book 1978 Springer Science+Business Media New York 1978 crystal.fields.growth.informa
描述The science and art of crystal growing continue to flourish; even with increasing understanding of the science, "feel" and skill continue to play their vital part, as was so clearly evidenced at the recent Boston International Conference on Crystal Growth. The aim of this volume, the same as that of the first, is to try to improve understanding by providing detailed discussions of crystal growth techniques and problems that arise with them. The published paper in the specialized literature is too limited a vehicle, by convention and by editorial pressure on length, to discuss matters in detail, yet it is in the small details born of experience that vital information can often lie concealed. A major aim of this series, therefore, has been to encourage contributors to describe rather fully what has been achieved in their special fields. The next volume of this series is now well underway and plans for Volume 4 are advanced. If you, the reader, feel that some important aspect of crystal growth is being unjustifiably neglected, perhaps you should consider offering a contribution! And even if you do not wish to do that, please do offer criticism-preferably constructive. I hope that the
出版日期Book 1978
关键词crystal; fields; growth; information; paper
版次1
doihttps://doi.org/10.1007/978-1-4757-4896-3
isbn_softcover978-1-4757-4898-7
isbn_ebook978-1-4757-4896-3
copyrightSpringer Science+Business Media New York 1978
The information of publication is updating

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发表于 2025-3-21 21:23:55 | 显示全部楼层
,Growth Effects in the Heteroepitaxy of III–V Compounds,al in that there is a lattice-parameter mismatch between the substrate and epitaxial layer even when they are nominally the same material. This mismatch may arise due to a doping density difference between the substrate and epitaxial layer or even a point defect density difference between the two.
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play their vital part, as was so clearly evidenced at the recent Boston International Conference on Crystal Growth. The aim of this volume, the same as that of the first, is to try to improve understanding by providing detailed discussions of crystal growth techniques and problems that arise with t
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Basic theory of weakly semialgebraic spaces,ratory and in the commercial market. The devices may be either homoepitaxial, where the substrate and epitaxial layers are of the same material, e.g., GaP on GaP for visible light-emitting diodes (LEDs), or comprised of heteroepitaxial layers where the substrate and epitaxial layers are of differing
发表于 2025-3-23 00:09:33 | 显示全部楼层
https://doi.org/10.1007/BFb0084987 reviewed in the contribution to Volume 1 of this series by D. W. Shaw of Texas Instruments). However, several basic problems have still not been fully investigated and the present text outlines work carried out on some of these at Sendai in the groups at the Research Institute of Electrical Communi
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Patch complexes, and homotopies again,phy of the Academy of Sciences in Moscow (Leninskii Prospekt 59) that appears to be almost completely unknown outside the Soviet Union. This Institute, apart from its interest in the structure of crystals, is also one of the major centers of research on crystal growth in the Soviet Union. Its work o
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