Titlebook: Computer-Aided Design and VLSI Device Development; Kit Man Cham,Soo-Young Oh,Daeje Chin Book 1988Latest edition Kluwer Academic Publishers

exostosis

出汗

僵硬

The Surface Inversion Problem in Trench Isolated CMOSr transistor gain will be reduced, thereby increasing the latchup initiating current. In a p-well process, the reduction of latchup sensitivity is achieved from reduction of the lateral parasitic p-n-p current gain.

外观

TOM

Book 1988Latest editionaid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec­ tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters

Scintillations

0893-3405 barrier lowering, trench isolation, hot elec­ tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters 978-1-4612-8956-2978-1-4613-1695-4Series ISSN 0893-3405

显微镜

hypotension

恩惠

调色板